Title :
High performance 50 nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high electron mobility transistors
Author :
Cao, Xin ; Thayne, Lain ; Thoms, Stephen ; Holland, Martin ; Stanley, Colin
Author_Institution :
Nanoelectron. Res. Centre, Glasgow Univ., UK
Abstract :
We report the performance of 50 nm gate length metamorphic GaAs HEMTs with maximum transconductance (g/sub m/) of 1520 mS/mm and current cut-off frequency(f/sub T/) of 350 GHz, to our knowledge the highest g/sub m/ and f/sub T/ of a GaAs-based HEMT transistor. The devices were fabricated with a novel UVIII/PMMA T-gate resist stack and a non-selective "digital" wet etch gate recess technology which results in a highly uniform, high yield sub-100 nm HEMT technology.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; high electron mobility transistors; indium compounds; submillimetre wave transistors; 1520 mS/mm; 350 GHz; 50 nm; InAlAs-InGaAs; InAlAs/InGaAs HEMT; UVIII/PMMA T-gate resist stack; maximum transconductance; metamorphic high electron mobility transistors; nonselective wet etch gate recess technology; Fabrication; Gallium arsenide; HEMTs; Indium phosphide; Lithography; MODFETs; Millimeter wave technology; Resists; Substrates; Wet etching;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256927
