Title :
Electrical characteristics of single, double & surround gate vertical MOSFETs with reduced overlap capacitance
Author :
Gili, E. ; Kunz, V.D. ; de Groot, C.H. ; Uchino, T. ; Donaghy, D. ; Hall, S. ; Ashburn, P.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Abstract :
The vertical MOSFET structure is one of the solutions for reducing the channel length of devices under 50 nm. Surround gate structures can be realized which offer improved short channel effects and more channel width per unit silicon area. In this paper, a low overlap capacitance, surround gate, vertical MOSFET technology is presented, which uses fillet local oxidation (FILOX) to reduce the overlap capacitance between the gate and the drain on the bottom of the pillar. Electrical characteristics of surround gate n-MOSFETs are presented and compared with results from single gate and double gate devices on the same wafer. The devices show good symmetry between the source on top and source on bottom configuration. The short channel effects of the surround gate MOSFETs are investigated.
Keywords :
MOSFET; oxidation; 100 nm; 3 nm; FILOX process; channel length reduction; channel width; double gate MOSFET; fillet local oxidation; pillar bottom gate/drain capacitance; reduced overlap capacitance n-MOSFET; short channel effects; single gate MOSFET; surround gate MOSFET; top/bottom source symmetry; vertical MOSFET; Capacitance; Computer science; Dry etching; Electric variables; Electrodes; Fabrication; Lithography; MOSFET circuits; Oxidation; Silicon;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256931
