DocumentCode
2443429
Title
Temperature operation of FDSOI devices with metal gate (TaSiN) and high-k dielectric
Author
Pretet, J. ; Vandooren, A. ; Ciistoloveanu, S.
Author_Institution
IMEP, ENSERG, Grenoble, France
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
573
Lastpage
576
Abstract
Experimental results for low and high temperature operation are presented on advanced FDSOI transistors with mid-gap metal gated thin film and high-k dielectric. The temperature dependence of the threshold voltage, subthreshold swing, transconductance and electron mobility is used to analyze the quality of Si film/high-k interface as well as transport mechanisms.
Keywords
MOSFET; dielectric thin films; electron mobility; silicon compounds; silicon-on-insulator; tantalum compounds; FDSOI device temperature dependent operation; FDSOI transistors; Si film/high-k interface; TaSiN; electron mobility; high temperature operation; low temperature operation; mid-gap metal gate devices; subthreshold swing; thin-film high-k dielectric; threshold voltage temperature dependence; transconductance; transport mechanisms; Dielectric thin films; Gate leakage; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicidation; Silicon; Temperature; Thin film devices; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256941
Filename
1256941
Link To Document