Silicon carbide accumulation-mode laterally diffused MOSFET

Author

Ayalew, Tesfaye ; Park, Jong-Mun ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., TU Vienna, Austria

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

581

Lastpage

584

Abstract

We present a new accumulation-mode structure for silicon carbide laterally diffused MOSFETs. Key parameters that alter the device performance have been optimized using the device simulator MINIMOS-NT. The relationship between blocking and driving capability of the structure has been analyzed. Excellent I-V characteristics with significant improvement in the reduction of the gate bias voltage has been achieved. A blocking voltage of 1460 V with a small leakage current, a considerably lower specific on resistance of 93 m/spl Omega//spl middot/cm/sup 2/ and a fairly large advantage in electrical performance and device reliability were achieved.

Keywords

leakage currents; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; 1460 V; I-V characteristics; SiC; accumulation-mode laterally diffused MOSFET; blocking voltage; gate bias voltage reduction; leakage current; specific on resistance; structure blocking capability; structure driving capability; Analytical models; Degradation; Doping; Electron mobility; Insulated gate bipolar transistors; MOSFET circuits; Optical scattering; Semiconductor materials; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256943

Filename

1256943