Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements

Author

Bernardini, S. ; Masson, P. ; Houssa, M. ; Lalande, F.

Author_Institution

IMT Technopole de Chateau Gombert, Marseille, France

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

589

Lastpage

592

Abstract

In this work, we present a new approach to determine the spatial oxide fixed charge repartition in memory tunnel oxide from I-V measurements after positive electrical stress. The electron injection current of a tunneling capacitor is computed from the Poisson equation resolution in the dielectric layer. This method allows us to take into account the tunneling barrier deformation due to the presence of charges trapped within the dielectric layer.

Keywords

EPROM; MIS capacitors; Poisson equation; dielectric thin films; electron traps; random-access storage; semiconductor device measurement; semiconductor device models; tunnelling; Fowler-Nordheim current measurements; dielectric layer Poisson equation resolution; electron injection current; electron trapping; nonvolatile EEPROM memory; positive electrical stress; spatial oxide fixed charge repartition; stressed memory tunnel oxide; trapped charges; tunneling barrier deformation; tunneling oxide capacitor; Capacitors; Charge measurement; Current measurement; Dielectric measurements; Electric variables measurement; Electrons; Poisson equations; Spatial resolution; Stress measurement; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256945

Filename

1256945