Title :
Determination of oxide charge repartition in memory tunnel oxide under stress from Fowler-Nordheim current measurements
Author :
Bernardini, S. ; Masson, P. ; Houssa, M. ; Lalande, F.
Author_Institution :
IMT Technopole de Chateau Gombert, Marseille, France
Abstract :
In this work, we present a new approach to determine the spatial oxide fixed charge repartition in memory tunnel oxide from I-V measurements after positive electrical stress. The electron injection current of a tunneling capacitor is computed from the Poisson equation resolution in the dielectric layer. This method allows us to take into account the tunneling barrier deformation due to the presence of charges trapped within the dielectric layer.
Keywords :
EPROM; MIS capacitors; Poisson equation; dielectric thin films; electron traps; random-access storage; semiconductor device measurement; semiconductor device models; tunnelling; Fowler-Nordheim current measurements; dielectric layer Poisson equation resolution; electron injection current; electron trapping; nonvolatile EEPROM memory; positive electrical stress; spatial oxide fixed charge repartition; stressed memory tunnel oxide; trapped charges; tunneling barrier deformation; tunneling oxide capacitor; Capacitors; Charge measurement; Current measurement; Dielectric measurements; Electric variables measurement; Electrons; Poisson equations; Spatial resolution; Stress measurement; Tunneling;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256945
