Title :
High-efficiency, class-B, S-band power amplifier
Author :
Khatibzadeh, M.A. ; Bayraktaroglu, B.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
A class-B, high-efficiency, S-band heterojunction bipolar transistor (HBT) amplifier has been developed for potential applications in phased-array radar and mobile communication systems. The amplifier achieves an output power level of 1.1 W with an associated power-added efficiency of 61% and 12.3-dB power gain at 3.0 GHz (10% bandwidth). The amplifier is turned on with the input RF signal and dissipates no DC power when idle even though it is biased at all times. This feature, which is characteristic of true class-B operation, is a significant requirement for high-efficiency T/R module and portable radio systems.<>
Keywords :
bipolar integrated circuits; microwave amplifiers; microwave integrated circuits; mobile communication systems; power amplifiers; radar equipment; 1.1 W; 12.3 dB; 3 GHz; 61 percent; AlGaAs-GaAs; class B S-band HBT power amplifier; high-efficiency T/R module; mobile communication systems; output power level; phased-array radar; portable radio systems; power gain; power-added efficiency; Bipolar transistors; FETs; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Leakage current; Operational amplifiers; Power amplifiers; Power generation; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99746
