DocumentCode :
24438
Title :
A 12 bit 200 MS/s Zero-Crossing-Based Pipelined ADC With Early Sub-ADC Decision and Output Residue Background Calibration
Author :
Soon-Kyun Shin ; Rudell, J.C. ; Daly, Denis C. ; Munoz, Carlos E. ; Dong-Young Chang ; Gulati, Kush ; Hae-Seung Lee ; Straayer, Matthew Z.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
Volume :
49
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
1366
Lastpage :
1382
Abstract :
A 12 bit 200 MS/s analog-to-digital converter (ADC) applies techniques of zero-crossing-based circuits as a replacement for high-gain high-speed op-amps. High accuracy in the residue amplifier is achieved by using a coarse phase in ZCBC followed by a level-shifting capacitor for fine phase. Sub-ADC flash comparators are strobed immediately after the coarse phase to achieve a high sampling rate. The systematic offset voltage between the coarse and fine phase manifests itself as systematic offset in the sub-ADC comparators. This offset is caused by the coarse phase undershoot and the fine phase overshoot. In this work, the offset is cancelled with background calibration by residue range correction circuits in the following stage´s sub-ADC. In addition, the sub-ADC´s random comparator offset is calibrated with a discrete-time charge-pump based background calibration technique. The reference buffer, bias circuitry, and digital error correction circuits are all integrated on a single chip. The ADC occupies an area of 0.282 mm 2 in 55 nm CMOS technology and dissipates 30.7 mW. It achieves 64.6 dB SNDR and 82.9 dBc SFDR at 200 MS/s for a FOM of 111 fJ/conversion-step. The SNDR degrades gracefully above the designed sampling frequency to 62.9 dB at 250 MS/s, and remains above 50 dB at 300 MS/s.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; charge pump circuits; decision circuits; discrete time systems; operational amplifiers; pipeline arithmetic; CMOS technology; FOM; SFDR; SNDR; ZCBC; analog-to-digital converter; background calibration technique; bias circuitry; coarse phase undershoot; digital error correction circuits; discrete-time charge-pump; fine phase overshoot; high-gain high-speed op-amps; level-shifting capacitor; output residue background calibration; power 30.7 mW; reference buffer; residue amplifier; residue range correction circuits; size 0.282 mm; size 55 nm; storage capacity 12 bit; sub-ADC decision; sub-ADC flash comparators; zero-crossing-based circuits; zero-crossing-based pipelined ADC; Calibration; Capacitors; Linearity; Pipelines; Resistance; Switching circuits; Timing; 12 bit; 200 MS/s; 55 nm; ADC; CMOS; pipelined; zero-crossing based circuits (ZCBCs);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2322853
Filename :
6822690
Link To Document :
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