DocumentCode :
2443845
Title :
32.3% efficient triple junction GaInP2/GaAs/Ge concentrator solar cells
Author :
Lillington, D. ; Cotal, H. ; Ermer, J. ; Friedman, D. ; Moriarty, T. ; Duda, A.
Author_Institution :
Spectrolab. Inc., Sylmar, CA, USA
Volume :
1
fYear :
2000
fDate :
2000
Firstpage :
516
Abstract :
This paper describes progress toward achieving high efficiency, multijunction solar cells for cost effective application in terrestrial PV concentrator systems. Small area triple junction GaInP2/GaAs/Ge solar cells have been fabricated with an efficiency of over 32% when measured by NREL under an AM1.5D spectrum at 47 suns concentration. Small changes to the device design can achieve similar efficiencies at concentration ratios of about 500 suns, resulting in cell costs of $0.5 to $0.6/W today, at production volumes of approximately 50 MW/year. This makes them highly cost effective in existing concentrator systems, compared to flat plate technologies. The future development of new 1 eV materials for space cells, in conjunction with further reduction in Ge wafer costs, promises to achieve solar cells of >40% efficiency that cost $0.4/W or less at these concentration ratios
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; solar cells; solar energy concentrators; 32.3 percent; 47 suns concentration; 500 suns concentration; AM1.5D spectrum; GaInP2-GaAs-Ge; Ge wafer costs; cost effective application; flat plate technologies; high efficiency; multijunction solar cells; terrestrial PV concentrator systems; triple junction GaInP2/GaAs/Ge concentrator solar cells; Costs; Gallium arsenide; Manufacturing industries; Marketing and sales; Photovoltaic cells; Production; Renewable energy resources; Semiconductor device manufacture; Space technology; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
Conference_Location :
Las Vegas, NV
Print_ISBN :
1-56347-375-5
Type :
conf
DOI :
10.1109/IECEC.2000.870753
Filename :
870753
Link To Document :
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