• DocumentCode
    2443845
  • Title

    32.3% efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

  • Author

    Lillington, D. ; Cotal, H. ; Ermer, J. ; Friedman, D. ; Moriarty, T. ; Duda, A.

  • Author_Institution
    Spectrolab. Inc., Sylmar, CA, USA
  • Volume
    1
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    516
  • Abstract
    This paper describes progress toward achieving high efficiency, multijunction solar cells for cost effective application in terrestrial PV concentrator systems. Small area triple junction GaInP2/GaAs/Ge solar cells have been fabricated with an efficiency of over 32% when measured by NREL under an AM1.5D spectrum at 47 suns concentration. Small changes to the device design can achieve similar efficiencies at concentration ratios of about 500 suns, resulting in cell costs of $0.5 to $0.6/W today, at production volumes of approximately 50 MW/year. This makes them highly cost effective in existing concentrator systems, compared to flat plate technologies. The future development of new 1 eV materials for space cells, in conjunction with further reduction in Ge wafer costs, promises to achieve solar cells of >40% efficiency that cost $0.4/W or less at these concentration ratios
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; germanium; indium compounds; p-n heterojunctions; solar cells; solar energy concentrators; 32.3 percent; 47 suns concentration; 500 suns concentration; AM1.5D spectrum; GaInP2-GaAs-Ge; Ge wafer costs; cost effective application; flat plate technologies; high efficiency; multijunction solar cells; terrestrial PV concentrator systems; triple junction GaInP2/GaAs/Ge concentrator solar cells; Costs; Gallium arsenide; Manufacturing industries; Marketing and sales; Photovoltaic cells; Production; Renewable energy resources; Semiconductor device manufacture; Space technology; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    1-56347-375-5
  • Type

    conf

  • DOI
    10.1109/IECEC.2000.870753
  • Filename
    870753