The study of ZnSe/GaAs MSM photodetector using selective-area epitaxy method

The ZnSe MSM photodetector has been fabricated on a GaAs substrate utilizing the selective-area epitaxy method. The as-grown ZnSe epilayer shows good quality by XRD and PL measurement. Optical and electrical properties of the ZnSe MSM photodiode were analysed both in this study. The dark current density measured at a bias of 5 V was 4.5times10^-8 A/cm2. The maximum photoresponsivity of 0.1 A/W and reject rate of more than two orders of magnitude were estimated, respectively. It was found that the selective-area epitaxy method will be helpful for the development of WBG-based short-wavelength OEICs.