Characterization and modelling of nano-crystals for single electron memory point devices

Author

Montes, L. ; Baron, Thierry ; De Salvo, B. ; Ferraton, Stéphane ; Zimmermann, Jacques ; Gautier, Jacques

Author_Institution

Lab. de Phys. des Composants A Semiconducteur, ENSERG-INPG, Grenoble, France

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

39

Lastpage

42

Abstract

This paper presents some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of nonvolatile single electron memories. This work is essential for the stabilisation of the technology to be used in the future for these devices aimed at very high memory arrays.

Keywords

MOS capacitors; capacitance; quantum interference devices; semiconductor device models; semiconductor quantum dots; semiconductor storage; MOS capacitor; Si dot 2D layer; Si-SiO₂; capacitance measurements; capacitors; conductance measurements; floating gate; nanocrystals; nonvolatile single electron memories; silicon dots; single electron memory point devices; very high memory arrays; Capacitance measurement; Capacitors; Current measurement; Frequency measurement; Nanoscale devices; Silicon compounds; Single electron memory; Single electron transistors; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997481

Filename

997481