Title :
Characterization and modelling of nano-crystals for single electron memory point devices
Author :
Montes, L. ; Baron, Thierry ; De Salvo, B. ; Ferraton, Stéphane ; Zimmermann, Jacques ; Gautier, Jacques
Author_Institution :
Lab. de Phys. des Composants A Semiconducteur, ENSERG-INPG, Grenoble, France
Abstract :
This paper presents some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of nonvolatile single electron memories. This work is essential for the stabilisation of the technology to be used in the future for these devices aimed at very high memory arrays.
Keywords :
MOS capacitors; capacitance; quantum interference devices; semiconductor device models; semiconductor quantum dots; semiconductor storage; MOS capacitor; Si dot 2D layer; Si-SiO2; capacitance measurements; capacitors; conductance measurements; floating gate; nanocrystals; nonvolatile single electron memories; silicon dots; single electron memory point devices; very high memory arrays; Capacitance measurement; Capacitors; Current measurement; Frequency measurement; Nanoscale devices; Silicon compounds; Single electron memory; Single electron transistors; Tunneling; Voltage;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997481
