Theoretical modeling of PtSi/porous Schottky detectors

Author

Raissi, Farshid ; Far, Mansoor Mohtashami

Author_Institution

Electr. Eng. Dept., K. N. Toosi Univ. of Technol., Tehran, Iran

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

47

Lastpage

49

Abstract

The current-voltage characteristic of PtSi/porous Si Schottky detectors has been modeled. It is assumed that high electric fields are developed at sharp and irregular edges of the porous surface, causing avalanche and tunneling breakdown. The shape of the I-V curve, its change with temperature, its response to near and far IR, and the large quantum efficiency are satisfactorily explained by this model.

Keywords

Schottky barriers; avalanche breakdown; elemental semiconductors; high field effects; infrared detectors; platinum compounds; porous semiconductors; semiconductor device breakdown; semiconductor device models; semiconductor-metal boundaries; silicon; tunnelling; I-V characteristic; I-V curve shape; IR detection; IR response; PtSi-Si; PtSi/porous Si Schottky detectors; avalanche breakdown; current-voltage characteristic; high electric fields; quantum efficieny; theoretical modeling; tunneling breakdown; Avalanche breakdown; Etching; Fabrication; Infrared detectors; Reproducibility of results; Schottky barriers; Shape; Sputtering; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997483

Filename

997483