DocumentCode
2444339
Title
The study of a drift-diffusion model
Author
Abouchabaka, J. ; Aboulaïch, R. ; Nachaoui, A. ; Souissi, A.
fYear
2001
fDate
29-31 Oct. 2001
Firstpage
54
Lastpage
58
Abstract
This work proposes a theoretical and a numerical study of a decoupled algorithm in order to approximate a free boundary separating the depletion region and the charge neutrality region in a field effect transistor of MESFET type. In order to do that, a simplified drift-diffusion model is used. In this work we prove the convergence of the previous algorithm and we present some numerical results.
Keywords
Schottky gate field effect transistors; convergence of numerical methods; semiconductor device models; MESFET; charge neutrality region; convergence; decoupled algorithm; depletion region; drift-diffusion model; free boundary; numerical results; Boundary conditions; Charge carrier processes; Convergence of numerical methods; Current density; Electron mobility; FETs; Gold; MESFETs; Poisson equations; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN
0-7803-7522-X
Type
conf
DOI
10.1109/ICM.2001.997485
Filename
997485
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