Title :
Novel varactors in BiCMOS technology with improved characteristics
Author :
Maget, Judith ; Kraus, Rainer
Author_Institution :
Dept. Wireless Syst. LIN D1, Infineon Technol. AG, Munich, Germany
Abstract :
The first true BiCMOS varactor combining typical elements of CMOS and bipolar Technologies is presented. Several test structures and different versions have been manufactured in a 0.25 μm BiCMOS technology and measured. The first type of the proposed novel varactor structure features a capacitance tuning range (ratio of maximum to minimum achievable values) Cmax/Cmin of 3.8:1 with a minimum quality factor Q of 32 and a maximum Q of 273. Choosing the second type of the herein presented novel device, allows quality factors from 6 to above 500, while increasing the capacitance tuning range to an outstanding value of 10.11:1.
Keywords :
BiCMOS analogue integrated circuits; Q-factor; circuit tuning; integrated circuit testing; varactors; 0.25 micron; BiCMOS technology; capacitance tuning range; quality factor; test structures; varactors; BiCMOS integrated circuits; CMOS technology; Inductors; Manufacturing; Parasitic capacitance; Q factor; Testing; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997486
