A simplified approach to optimum noise source impedance determination for GaAs FET amplifiers

Author

Sanders, R. Bruce ; Robertson, R. Clark

Author_Institution

Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

1988

fDate

7-9 June 1988

Firstpage

2057

Abstract

A simplified, analytical approach to determine the optimum noise source impedance of a GaAs FET amplifier is developed. The approach requires a knowledge of the transistor´s small-signal model parameters and its minimum noise temperature versus frequency. The approach described is currently limited to the UHF and VHF bands. The amount of error in the computed value of optimum noise source impedance is proportional to the error in the minimum noise temperature data when the error at each data point is correlated. When the error is uncorrelated, the method does not yield acceptable results. Numerical results and an error analysis are presented.<>

Keywords

III-V semiconductors; electric impedance; electron device noise; error analysis; field effect transistor circuits; gallium arsenide; radiofrequency amplifiers; FET amplifiers; GaAs; VHF band; analytical approach; error analysis; minimum noise temperature; numerical results; optimum noise source impedance; small-signal model parameters; Circuit noise; Electrical resistance measurement; Equivalent circuits; FETs; Frequency; Gallium arsenide; Impedance; Noise level; Noise measurement; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo, Finland

Type

conf

DOI

10.1109/ISCAS.1988.15345

Filename

15345