Electroluminescence analysis of neutron irradiation of JFETs

Author

Ahaitouf, Ali ; Lahbabi, M. ; Fliyou, M. ; Abarkan, E. ; Hoffmann, Axel ; Charles, JP

Author_Institution

Faculte des Sci. et Techniques, UFR L2SC, Fes, Morocco

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

71

Lastpage

74

Abstract

Electroluminescence (EL) measurements are used as a sensitive technique for the study of fast neutron irradiation of silicon n-channel JFET overlaid by a passivation oxide layer. By theoretical simulations, it is demonstrated that neutron irradiation result in two effects: an increase of the refractive index of the passivation oxide and the introduction of deep level traps which reduce the emitted intensities by reduction of the mobility of hot carriers.

Keywords

carrier mobility; deep levels; electroluminescence; elemental semiconductors; hot carriers; junction gate field effect transistors; neutron effects; passivation; refractive index; silicon; Si; Si n-channel JFET; deep levels traps; electroluminescence analysis; fast neutron irradiation; hot carrier mobility reduction; p-n junction irradiation; passivation oxide layer; passivation oxide refractive index increase; theoretical simulations; Electroluminescence; Electron traps; Hot carriers; Interference; JFETs; Neutrons; Passivation; Refractive index; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997490

Filename

997490