DocumentCode :
2444545
Title :
Reverse characteristics of commercial silicon solar cells-impact on hot spot temperatures and module integrity
Author :
Danner, M. ; Bucher, K.
Author_Institution :
Fraunhofer-Inst. fur Solare Energiesyst., Freiburg, Germany
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
1137
Lastpage :
1140
Abstract :
For commercial silicon solar cells of 12 manufacturers, reverse I-V characteristics (10 cells each to obtain statistics) and infrared thermal images have been analysed. Except for one cell type, there is a large scatter. Even within batches, cell behaviour varies strongly between avalanche breakdown and thermal breakdown. The impact on blocking diode concepts and maximum cell temperatures, as compared to EVA cure temperatures, is discussed. Some module designs may have to be reviewed
Keywords :
avalanche breakdown; electric current measurement; elemental semiconductors; infrared imaging; silicon; solar cells; temperature measurement; thermal analysis; voltage measurement; EVA cure temperatures; Si; Si solar cells; avalanche breakdown; blocking diode concept impact; cell behaviour; commercial silicon solar cells; hot spot temperatures; infrared thermal images; maximum cell temperature; module integrity; power dissipation; reverse I-V characteristics; reverse characteristics; shaded solar cell; thermal breakdown; thermal imaging; Avalanche breakdown; Diodes; Image analysis; Infrared imaging; Manufacturing; Photovoltaic cells; Scattering; Silicon; Statistical analysis; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654289
Filename :
654289
Link To Document :
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