Title :
Conception of single-lithography and space technologies of ULSI and WSI on functional nanoelectronic and optoelectronic elements
Author :
Bubennikov, Alexandre N.
Author_Institution :
Moscow Inst. of Phys. & Technol., Russia
Abstract :
Dynamics and reforms by which the semiconductor industry could be transformed into next-generation manufacturing of Si deep-submicron and nanoelectronic ULSI and WSI are discussed For competitive Si ULSI and WSI the functional integration becomes a core design principle and cardinal simplification of manufacturing processes/equipment becomes a core technology principle. Concept of global single lithography (no-lithography on spacefab) technology for nanoelectronic complementary bipolar field-effect (CBFE), Vertical Merged MOS (VMMOS) and optoelectronic VMMOS (OVMMOS) increasing the packaging density for high-speed low-voltage ULSI and WSI is considered Technology and economics (Technonomics) concepts of space hyperhigh- vacuum technologies and processing in framework of flexible scalable no-lithography spacefab under condition of orbital flight are presented.
Keywords :
ULSI; field effect integrated circuits; integrated circuit packaging; lithography; low-power electronics; nanotechnology; optoelectronic devices; space vehicle electronics; wafer-scale integration; OVMMOS; Si; Technonomics; ULSI; WSI; complementary bipolar field-effect technologies; deep-submicron integration; flexible scalable no-lithography spacefab; functional nanoelectronic elements; functional optoelectronic elements; high-speed ULSI; low-voltage ULSI; next-generation manufacturing; optoelectronic VMMOS; orbital flight; packaging density; single-lithography technologies; space technologies; vertical merged MOS technologies; CMOS technology; Cost function; Electronics industry; Lithography; Logic devices; Manufacturing processes; Microelectronics; Semiconductor device manufacture; Space technology; Ultra large scale integration;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997496
