DocumentCode
2444733
Title
Single Event Upset Characterization of the TMS320C6713 Digital Signal Processor Using Proton Irradiation
Author
Hiemstra, David M.
Author_Institution
MDA, Brampton, ON, Canada
fYear
2009
fDate
20-24 July 2009
Firstpage
133
Lastpage
135
Abstract
The proton induced SEU cross-section of the TMS320C6713 digital signal processor´s functional blocks are presented. The cross-sections are used to estimate the upset rates in the space radiation environment.
Keywords
CMOS integrated circuits; digital signal processing chips; integrated circuit testing; proton effects; radiation hardening (electronics); spacecraft computers; SEU cross-section; TMS320C6713 digital signal processor; critical computer systems; functional blocks; proton irradiation; radiation hardening; single event upset; space radiation environment; Circuit testing; Digital signal processing; Digital signal processors; Logic devices; Logic testing; Performance evaluation; Protons; Random access memory; SDRAM; Single event upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location
Quebec City, QC
Print_ISBN
978-1-4244-5092-3
Type
conf
DOI
10.1109/REDW.2009.5336300
Filename
5336300
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