Title :
Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs
Author :
Lawrence, Reed K. ; Ross, Jason F. ; Haddad, Nadim F. ; Reed, Robert A. ; Albrecht, David R.
Author_Institution :
BAE Syst., Manassas, VA, USA
Abstract :
Enhanced single event upset (SEU) sensitivity to low energy protons, as much as 5-6 orders of ten, has been observed in 90 nm epitaxial-bulk complementary metal oxide semiconductor (CMOS) static random access memories (SRAM). Enhancements to process and cell design are discussed.
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; radiation hardening (electronics); bulk CMOS SRAMs; cell design; enhanced single event upset sensitivity; epitaxial-bulk complementary metal oxide semiconductor; low energy protons; size 90 nm; soft error sensitivity; static random access memories; CMOS technology; Capacitors; Process design; Protons; Random access memory; Resistors; Single event upset; Space technology; Testing; Vehicle dynamics;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336302
