• DocumentCode
    2444785
  • Title

    Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs

  • Author

    Koga, R. ; Yu, P. ; Crawford, K. ; George, J. ; Zakrzewski, M.

  • Author_Institution
    Aerosp. Corp., El Segundo, CA, USA
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    127
  • Lastpage
    132
  • Abstract
    Synergistic effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated. The memory imprint effect has been observed to yield varying results.
  • Keywords
    SRAM chips; radiation effects; SEU sensitive SRAMs; memory imprint effect; particle fluence; single event upset; static random access memories; synergistic effects; total ionizing dose; yield varying results; Aerospace testing; Degradation; Ionizing radiation; Logic; MOS devices; National electric code; Protons; Random access memory; SRAM chips; Single event upset;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2009 IEEE
  • Conference_Location
    Quebec City, QC
  • Print_ISBN
    978-1-4244-5092-3
  • Type

    conf

  • DOI
    10.1109/REDW.2009.5336303
  • Filename
    5336303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2444785