DocumentCode
2444817
Title
TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission
Author
Oldham, T.R. ; Friendlich, M.R. ; Sanders, A.B. ; Seidleck, C.M. ; Kim, H.S. ; Berg, M.D. ; LaBel, K.A.
Author_Institution
Perot Syst. Gov. Services, Inc., Greenbelt, MD, USA
fYear
2009
fDate
20-24 July 2009
Firstpage
114
Lastpage
122
Abstract
SEE and TID results are presented for two advanced commercial flash memories, Samsung and Micron 4 Gb. Both have very good TID response, and very good SEU bit error rates, but the Samsung parts have lower SEFI rates and lower rates of destructive failures.
Keywords
aerospace instrumentation; failure analysis; flash memories; integrated circuit testing; logic gates; radiation hardening (electronics); Micron 4G NAND flash memories; NASA MMS mission; SEE response; SEFI rates; SEU bit error rates; TID response; advanced Samsung flash memories; destructive failures; single event effects; storage capacity 4 Gbit; total ionizing dose; CMOS technology; Circuit testing; Error correction; Frequency; NASA; Performance evaluation; Plastic packaging; Production facilities; Space technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location
Quebec City, QC
Print_ISBN
978-1-4244-5092-3
Type
conf
DOI
10.1109/REDW.2009.5336305
Filename
5336305
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