• DocumentCode
    2444864
  • Title

    Heavy-Ion and Total Ionizing Dose (TID) Performance of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

  • Author

    Katti, Romney R. ; Lintz, John ; Sundstrom, Lance ; Marques, Tony ; Scoppettuolo, Steve ; Martin, Douglas

  • Author_Institution
    Honeywell Int., Inc., Plymouth, MN, USA
  • fYear
    2009
  • fDate
    20-24 July 2009
  • Firstpage
    103
  • Lastpage
    105
  • Abstract
    An MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm2/mg for fluences to 108 ions/cm2; and TED hardness in excess of 1 Mrad.
  • Keywords
    MRAM devices; radiation effects; LET immunity; MRAM; heavy-ion dose; linear energy transfer; magnetoresistive random access memory; nonvolatile memory; storage capacity 1 Mbit; total ionizing dose; Insulation; Laboratories; Magnetic tunneling; Magnetization; Magnetoresistance; Nonvolatile memory; Packaging; Random access memory; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2009 IEEE
  • Conference_Location
    Quebec City, QC
  • Print_ISBN
    978-1-4244-5092-3
  • Type

    conf

  • DOI
    10.1109/REDW.2009.5336307
  • Filename
    5336307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2444864