Title :
SEGR/SEB Test Results on Emerging Hi-Rel Power MOSFETs
Author :
Selva, Luis E. ; Ikeda, Naomi ; Scheick, Leif Z.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Test results for several newly available Hi-Rel total dose hardened power MOSFETs are presented. The safe-operating-area (SOA) of several devices were determined with Ag and Xe ions having incident LETs of 42.2 and 53.1 MeV cm2/mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology.
Keywords :
aerospace instrumentation; ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device testing; Hi-Rel total dose hardened power MOSFETs; SEGR-SEB test; aerospace applications; device safe-operating-area; incident LETs; linear energy transfer; silver ion; total dose hardened technology; xenon ion; Aerospace testing; Electric variables measurement; MOSFETs; Manufacturing; NASA; Performance evaluation; Radiation hardening; Space technology; Telephony; Voltage;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336311
