Title :
Fabrication of single-electron tunneling devices
Author :
Yoo, K.-H. ; Park, J.C. ; Park, J.W. ; Choi, J.B.
Author_Institution :
Korea Res. Inst. of Stand. & Sci., Taejon, South Korea
Abstract :
We have fabricated very small Al/AlO/sub x//Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150/spl times/150 nm/sup 2/.
Keywords :
aluminium; aluminium compounds; electric current measurement; electron beam lithography; interface states; measurement standards; tunnelling; 150 nm; Al-AlO-Al; Al/AlO/sub x//Al junctions; SEM micrograph; current standard; double-angle evaporation; electron-beam lithography; fabrication; Artificial intelligence; Electrodes; Fabrication; Frequency; Lithography; Physics; Scanning electron microscopy; Silicon; Tunneling; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1996 Conference on
Conference_Location :
Braunschweig, Germany
Print_ISBN :
0-7803-3376-4
DOI :
10.1109/CPEM.1996.547063
