Title :
Low Dose Rate Testing on Commercial Low Dropout Voltage References
Author :
Álvarez, María T. ; Domínguez, José A. ; Hernando, Carlos ; Fernández, César P. ; Arruego, Ignacio
Author_Institution :
Inst. Nac. de Tec. Aeroespacial, Torrejon de Ardoz, Spain
Abstract :
Voltage references which are suitable for low Earth orbit space missions were irradiated at low dose rate with gamma particles by INTA (Institute Nacional de Tecnica Aeroespacial). The aim of this work is to analyze the enhancement of low dose rate sensitivity in this type of devices, based on bipolar as well as CMOS technology. For this purpose, parameters such as output voltage, load regulation and supply current were measured. Results and conclusions about the components radiation hardness assurance are reported.
Keywords :
CMOS integrated circuits; bipolar integrated circuits; gamma-ray effects; integrated circuit testing; radiation hardening (electronics); semiconductor device testing; space vehicle electronics; CMOS technology; INTA; TID radiation test; bipolar technology; gamma particle irradiation; load regulation; low Earth orbit space missions; low dose rate sensitivity; low dose rate testing; output voltage; radiation hardness; supply current; total ionizing dose tests; voltage references; CMOS technology; Current measurement; Current supplies; Extraterrestrial measurements; Gamma rays; Low earth orbit satellites; Low voltage; Space missions; Space technology; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 2009 IEEE
Conference_Location :
Quebec City, QC
Print_ISBN :
978-1-4244-5092-3
DOI :
10.1109/REDW.2009.5336315
