Emerging non-volatile memory technologies

Author

Müller, Gerhard ; Nagel, Nicolas ; Pinnow, Cay-Uwe ; Röhr, Thomas

Author_Institution

Infineon Technol., Munich, Germany

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

37

Lastpage

44

Abstract

The concept, the status and the respective challenges of the emerging non-volatile memory technologies are described. After discussing the magneto-resistive random access memory technology, the ferro-electric random access memory technology and the phase change memory technology, their key properties are summarized and compared to the well-established Flash memory technology. From that comparison the main challenges for the emerging technologies towards catching a significant fraction of the overall memory market are highlighted.

Keywords

ferroelectric storage; flash memories; magnetoresistive devices; memory architecture; random-access storage; Flash memory technology; ferro-electric random access memory technology; magneto-resistive random access memory technology; nonvolatile memory technologies; phase change memory technology; Electrodes; Flash memory; Insulation; Magnetic fields; Magnetic tunneling; Magnetization; Metal-insulator structures; Nonvolatile memory; Phase change random access memory; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257065

Filename

1257065