Title :
Emerging non-volatile memory technologies
Author :
Müller, Gerhard ; Nagel, Nicolas ; Pinnow, Cay-Uwe ; Röhr, Thomas
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The concept, the status and the respective challenges of the emerging non-volatile memory technologies are described. After discussing the magneto-resistive random access memory technology, the ferro-electric random access memory technology and the phase change memory technology, their key properties are summarized and compared to the well-established Flash memory technology. From that comparison the main challenges for the emerging technologies towards catching a significant fraction of the overall memory market are highlighted.
Keywords :
ferroelectric storage; flash memories; magnetoresistive devices; memory architecture; random-access storage; Flash memory technology; ferro-electric random access memory technology; magneto-resistive random access memory technology; nonvolatile memory technologies; phase change memory technology; Electrodes; Flash memory; Insulation; Magnetic fields; Magnetic tunneling; Magnetization; Metal-insulator structures; Nonvolatile memory; Phase change random access memory; Random access memory;
Conference_Titel :
Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7995-0
DOI :
10.1109/ESSCIRC.2003.1257065
