10 Gb/s single-ended laser driver in 0.35/spl mu/m SiGe BiCMOS technology

Author

Tsai, Chia-Ming ; Huang, Li-Ren ; Li, Day-Vei ; Chang, Chien-Fu

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

289

Lastpage

292

Abstract

This paper presents a high-efficiency 10 Gb/s single-ended laser driver using a novel operating point control scheme. The cascade output configuration is used to reduce Miller capacitance and extend driving capability. To reduce the speed degradation caused by the ground inductance, a special but simple technique is employed while integrating the whole driver design. The laser driver is capable of driving 100mA modulation current with total power consumption, excluding the modulation current, of less than 140mW at 3.3V.

Keywords

BiCMOS integrated circuits; driver circuits; semiconductor lasers; silicon compounds; 0.35 microns; 10 Gbit/s; 100 mA; 140 mW; 3.3 V; BiCMOS technology; Miller capacitance reduction; SiGe; cascade output configuration; extended driving capability; ground inductance; laser driver design; operating point control scheme; single-ended laser driver; speed degradation reduction; BiCMOS integrated circuits; Capacitance; Degradation; Energy consumption; Germanium silicon alloys; Inductance; Optical control; Power lasers; Quantum cascade lasers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257129

Filename

1257129