• DocumentCode
    2447385
  • Title

    Cathodoluminescent in heavily-doped ZnSe

  • Author

    Chiu, Dirk M.

  • Author_Institution
    Moon Lab., Doncaster East, Vic., Australia
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1222
  • Abstract
    The present cathodoluminescent investigation of ZnSe single crystals used samples grown by closed-tube thermal diffusion technique. The crystals used had gone through three different stages of treatments. The as-grown ZnSe was doped with 8×1018 cm-3 iodine concentration during growth, and the as-grown sample received zinc extraction treatment, and that subsequently diffused with Zn-In impurity of 7×1018 cm-3 indium concentration. The yellow-orange light with a broad band peaking at 2.01 eV was observed in all the samples, and was contributed as the self-activated luminescent center due to the deep donor state formed from the host crystal cation surrounding the activator, while the activator perturbs the cation to form this state. A configuration coordinate model, together with a quantum-mechanical vibration model analysis indicated and confirmed the temperature shift of the luminescent peak and the temperature dependency of the half-width of the main band
  • Keywords
    II-VI semiconductors; cathodoluminescence; phosphors; semiconductor doping; semiconductor growth; thermal diffusion; zinc compounds; 2.01 eV; ZnSe; cathodoluminescent investigation; closed-tube thermal diffusion growth; configuration coordinate model; deep donor state; heavily-doped ZnSe; host crystal cation; luminescent peak; quantum-mechanical vibration model analysis; self-activated luminescent center; temperature shift; yellow-orange light; zinc extraction treatment; Crystals; Electron traps; Energy states; Gold; Lattices; Luminescence; Phosphors; Spontaneous emission; Temperature dependence; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Engineering Conference and Exhibit, 2000. (IECEC) 35th Intersociety
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    1-56347-375-5
  • Type

    conf

  • DOI
    10.1109/IECEC.2000.870934
  • Filename
    870934