Numerical simulation of functional vertical merged MOS elements with optical supply

Author

Bubennikov, Alexandre N. ; Rakitin, Vladimir V. ; Zykov, Andrey V.

Author_Institution

Moscow Inst. of Phys. & Technol., Russia

fYear

2001

fDate

29-31 Oct. 2001

Firstpage

205

Lastpage

208

Abstract

Functional optoelectronic vertical merged MOS (OVMMOS) elements are considered with optical power supply increasing the packaging density for advanced high-speed low-power deep-submicron ULSI . Two types of new OVVMOS logical elements are proposed, analyzed and simulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using 2D numerical device-circuit simulators (DCS). The problems of low light power operation and optimization of OVMMOS elements are investigated using 2D-DCS.

Keywords

CMOS integrated circuits; MOSFET; ULSI; low-power electronics; phototransistors; semiconductor device models; 2D numerical device-circuit simulators; OVMMOS element optimization; OVVMOS logical elements; electron-hole plasma; functional optoelectronic vertical merged MOS elements; high-speed low-power deep-submicron ULSI; integration level; low light power operation; numerical simulation; optical power supply; packaging density; planar 2D-CMOS circuits; Charge carrier processes; Circuits; Doping; MOSFETs; Numerical simulation; P-n junctions; Power supplies; Substrates; Transistors; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on

Print_ISBN

0-7803-7522-X

Type

conf

DOI

10.1109/ICM.2001.997646

Filename

997646