Title :
Numerical simulation of functional vertical merged MOS elements with optical supply
Author :
Bubennikov, Alexandre N. ; Rakitin, Vladimir V. ; Zykov, Andrey V.
Author_Institution :
Moscow Inst. of Phys. & Technol., Russia
Abstract :
Functional optoelectronic vertical merged MOS (OVMMOS) elements are considered with optical power supply increasing the packaging density for advanced high-speed low-power deep-submicron ULSI . Two types of new OVVMOS logical elements are proposed, analyzed and simulated. Low-voltage low-power OVMMOS with combined channels for electrons and holes to increase integration level are simulated using 2D numerical device-circuit simulators (DCS). The problems of low light power operation and optimization of OVMMOS elements are investigated using 2D-DCS.
Keywords :
CMOS integrated circuits; MOSFET; ULSI; low-power electronics; phototransistors; semiconductor device models; 2D numerical device-circuit simulators; OVMMOS element optimization; OVVMOS logical elements; electron-hole plasma; functional optoelectronic vertical merged MOS elements; high-speed low-power deep-submicron ULSI; integration level; low light power operation; numerical simulation; optical power supply; packaging density; planar 2D-CMOS circuits; Charge carrier processes; Circuits; Doping; MOSFETs; Numerical simulation; P-n junctions; Power supplies; Substrates; Transistors; Ultra large scale integration;
Conference_Titel :
Microelectronics, 2001. ICM 2001 Proceedings. The 13th International Conference on
Print_ISBN :
0-7803-7522-X
DOI :
10.1109/ICM.2001.997646
