• DocumentCode
    2448048
  • Title

    A 10Gbps/port 8/spl times/8 shared bus switch with embedded DRAM hierarchical output buffer

  • Author

    Lee, Kangmin ; Lee, Se-Joong ; Hoi-Jun Yoo

  • Author_Institution
    Semicond. Syst. Lab., KAIST, Daejon, South Korea
  • fYear
    2003
  • fDate
    16-18 Sept. 2003
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    A hierarchical buffering technique with the embedded DRAM (eDRAM) as a packet buffer is proposed for 10Gbps/port 8/spl times/8 shared bus switch. A prototype chip with 8 input ports and an output port is implemented by 0.16/spl mu/m DRAM technology. To satisfy the required buffering capacity and memory bandwidth of 90Gbps, a 200MHz 32kb SRAM and four 25MHz 1 Mb eDRAM macros are used hierarchically with 512bit interface. The die area is 13.8mm/sup 2/ including SRAM and DRAM.
  • Keywords
    CMOS memory circuits; DRAM chips; SRAM chips; embedded systems; system-on-chip; 10Gbps/port; 512bit interface; DRAM hierarchical output buffer; DRAM technology; SRAM; buffering capacity; hierarchical buffering; memory bandwidth; packet buffer; prototype chip; shared bus switch; Bandwidth; Capacity planning; Costs; Delay; Laboratories; Packet switching; Quality of service; Random access memory; Semiconductor device measurement; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European
  • Conference_Location
    Estoril, Portugal
  • Print_ISBN
    0-7803-7995-0
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2003.1257172
  • Filename
    1257172