Title :
Monolithic indium phosphide-based HEMT multioctave distributed amplifier
Author :
Sovero, E. ; Deakin, D. ; Ho, W.J. ; Robinson, G.D. ; Farley, C.W. ; Higgins, J.A. ; Chang, M.F.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The superior performance qualities of indium-phosphide-based high-electron-mobility transistor (HEMT) structures has been established with discrete devices. A report is presented on the first monolithic ICs made with this material system. MBE grown AlInAs/GaInAs HEMT layer on an InP substrate. Results are presented on a monolithic distributed amplifier with greater than 10-dB gain from 2 to 30 GHz. At 14 GHz, the noise figure was 5.2 dB with 14 dB of associated gain. These circuits have all the necessary components for a high-performance amplifier, including quarter-micron EBL (electron beam lithography) defined gates, MIM (metal-insulator-metal) capacitors, air-bridge metal crossovers, and plated-through-substrate vias to the ground plane.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; 0.25 micron; 14 dB; 2 to 30 GHz; 5.2 dB; AlInAs-GaInAs-InP; HEMT; InP; MIM capacitor; MMIC; SHF; air-bridge metal crossovers; electron beam lithography; high-electron-mobility transistor; microwave IC; monolithic ICs; multioctave distributed amplifier; plated-through-substrate vias; quarter micron defined gates; Circuits; Distributed amplifiers; Electron beams; Gain; HEMTs; Indium phosphide; Lithography; MODFETs; Metal-insulator structures; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99768
