Analytical calculation of current and voltage stresses of Two-Stage Matrix Converter’s power semiconductors

The currentpsilas path through the power semiconductors of matrix converters depends inherently on the load side displacement factor. In principle, two particular cases should be investigated. They correspond to a lagging/leading output displacement angle lower and superior to pi/6 respectively. This paper determines new analytical expressions of the current and voltage stresses of two-stage matrix converterpsilas power semiconductors for a load side lagging/leading displacement angle less than pi/6. The first novelty in the proposed approach is that any assumption which decouples the two stages is adopted. The second one is that the proposed formulas are not restricted to the case of unity input displacement factor i.e. they are available for a variable IDF operation. Besides the well known influence of the input displacement factor on the reactive power demanded from the utility and the maximum achievable voltage transfer ratio, it is shown that this factor also affects the current stress on the power semiconductors. A comparative study carried out between the results of analytical computations and those of numerical simulations shows that the two methods agree well and emphasizing thus the effectiveness and accuracy of the proposed analytical expressions.