Title :
The design of microwave subsystems based on a device physical model
Author :
Pantoja, R.R. ; Howes, M.J. ; Richardson, J.R. ; Snowden, C.M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Leeds Univ., UK
Abstract :
A numerical simulation to characterize both the DC and RF behaviour of GaAs MESFETs is described. It is based on coupling the four semiclassical semiconductor equations with analytical expressions for the channel and solving these using a forward-difference scheme. In the approach taken, the semiconductor equations are reduced to a one-dimensional approximation using the expressions for the channel, requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. DC and RF results for a 0.5- mu m MESFET are presented.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; difference equations; gallium arsenide; semiconductor device models; solid-state microwave devices; 0.5 micron; DC behaviour; GaAs; MESFETs; RF behaviour; channel; design; forward-difference scheme; microwave subsystems; numerical simulation; one-dimensional approximation; physical model; semiclassical semiconductor equations; Analytical models; Computational modeling; Difference equations; Electrons; Gallium arsenide; MESFETs; Microwave devices; Poisson equations; Radio frequency; Solid modeling;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo, Finland
DOI :
10.1109/ISCAS.1988.15347
