Monolithic SOI-MEMS capacitive pressure sensor with standard bulk CMOS readout circuit

Author

Ylimaula, Miikka ; Åberg, Markku ; Kiihamäki, Jyrki ; Ronkainen, Hannu

Author_Institution

Microelectron., VTT Inf. Technol., Finland

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

611

Lastpage

614

Abstract

We report an integrated monolithic micromechanical capacitive pressure sensor circuit based on novel method for fabricating pressure detecting vacuum cavities into buried oxide of SOI-wafer. The method allows fabricating the readout circuit with standard bulk CMOS process. The readout circuit of the pressure sensor is a low-power CMOS relaxation oscillator.

Keywords

CMOS integrated circuits; capacitive sensors; micromechanical devices; monolithic integrated circuits; pressure sensors; relaxation oscillators; silicon-on-insulator; SOI-wafer; buried oxide; capacitive pressure sensor circuit; low-power CMOS relaxation oscillator; monolithic SOI-MEMS; monolithic micromechanical pressure sensor circuit; standard bulk CMOS process; standard bulk CMOS readout circuit; vacuum cavities; CMOS process; Capacitive sensors; Circuits; Conductivity; Etching; Microelectromechanical devices; Micromechanical devices; Silicon on insulator technology; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257209

Filename

1257209