Title :
Nonlinear modelling of an almost constant transconductance MESFET power transistor
Author :
Bös, Thomas A. ; Lott, Urs ; Bächtold, Werner
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
The simulated harmonics for a MESFET power transistor with an almost constant transconductance in the region of operation are compared with the measured harmonics. The transistor is modelled with a modified Statz model. The model parameters are optimised for an application in power amplifier design. The specific parameter extraction process is described
Keywords :
harmonics; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MESFET; semiconductor device models; -2.2 V; 15 V; 18 GHz; MESFET power transistor; almost constant transconductance; gate drain breakdown voltage; model parameter optimisation; modified Statz model; nonlinear modelling; parameter extraction process; power amplifier design; simulated harmonics; threshold voltage; transit frequency; Circuits; Current measurement; MESFETs; Power amplifiers; Power system harmonics; Power system modeling; Power transistors; Semiconductor process modeling; Transconductance; Voltage;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668206
