Nonlinear modelling of an almost constant transconductance MESFET power transistor

Author

Bös, Thomas A. ; Lott, Urs ; Bächtold, Werner

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland

fYear

1997

fDate

24-25 Nov 1997

Firstpage

1

Lastpage

6

Abstract

The simulated harmonics for a MESFET power transistor with an almost constant transconductance in the region of operation are compared with the measured harmonics. The transistor is modelled with a modified Statz model. The model parameters are optimised for an application in power amplifier design. The specific parameter extraction process is described

Keywords

harmonics; microwave field effect transistors; microwave power amplifiers; microwave power transistors; power MESFET; semiconductor device models; -2.2 V; 15 V; 18 GHz; MESFET power transistor; almost constant transconductance; gate drain breakdown voltage; model parameter optimisation; modified Statz model; nonlinear modelling; parameter extraction process; power amplifier design; simulated harmonics; threshold voltage; transit frequency; Circuits; Current measurement; MESFETs; Power amplifiers; Power system harmonics; Power system modeling; Power transistors; Semiconductor process modeling; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668206

Filename

668206