Title :
Proceedings of Semiconducting and Semi-Insulating Materials Conference
fDate :
April 29 1996-May 3 1996
Abstract :
The following topics were discussed: III-V growth and techniques; II-VI materials; wide-band gap semiconductors; amorphous materials; semi-insulating III-V characterisation; IV-VI materials, Si-Ge and Si-C; defects; devices and microcavities
Keywords :
II-VI semiconductors; III-V semiconductors; IV-VI semiconductors; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; GaAs; II-VI materials; III-V growth; IV-VI materials; InAs; InP; Si-C; Si-Ge; amorphous materials; defects; devices; microcavities; wide-band gap semiconductors;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse, France
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570861
