DocumentCode
2449282
Title
Unipolar Optoelectronic Devices
Author
Warde, E. ; Julien, F.H. ; Tchernycheva, M.
Author_Institution
Action OptoGaN, Institut d´´Electronique Fondamentale, UMR 8622 CNRS, Bât. 220, Université Paris Sud, 91405 Orsay, France. e-mail: warde@iefu-psud.fr
Volume
2
fYear
2006
fDate
24-28 April 2006
Firstpage
2067
Lastpage
2072
Abstract
We discuss the main characteristics of the intersubband transitions in III-V semiconductor heterostructures and in particular in nitride materials and describe the operation principles of the most important unipolar optoelectronic devices. An example of experimental and theoretical study of the intersubband transitions in GaN/AIN heterostrucure is given. The advantages of unipolar optoelectronic devices with respect to bipolar devices are explained. The high potential of nitride semiconductors as an emerging technology to develop ultra-fast unipolar optoelectronic devices operating at fibre-optics telecommunications wavelengths is demonstrated.
Keywords
Absorption; Electron optics; Gallium nitride; III-V semiconductor materials; Optical devices; Optical fibers; Optoelectronic devices; Potential well; Quantum cascade lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Information and Communication Technologies, 2006. ICTTA '06. 2nd
Print_ISBN
0-7803-9521-2
Type
conf
DOI
10.1109/ICTTA.2006.1684720
Filename
1684720
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