Title :
Unipolar Optoelectronic Devices
Author :
Warde, E. ; Julien, F.H. ; Tchernycheva, M.
Author_Institution :
Action OptoGaN, Institut d´´Electronique Fondamentale, UMR 8622 CNRS, Bât. 220, Université Paris Sud, 91405 Orsay, France. e-mail: warde@iefu-psud.fr
Abstract :
We discuss the main characteristics of the intersubband transitions in III-V semiconductor heterostructures and in particular in nitride materials and describe the operation principles of the most important unipolar optoelectronic devices. An example of experimental and theoretical study of the intersubband transitions in GaN/AIN heterostrucure is given. The advantages of unipolar optoelectronic devices with respect to bipolar devices are explained. The high potential of nitride semiconductors as an emerging technology to develop ultra-fast unipolar optoelectronic devices operating at fibre-optics telecommunications wavelengths is demonstrated.
Keywords :
Absorption; Electron optics; Gallium nitride; III-V semiconductor materials; Optical devices; Optical fibers; Optoelectronic devices; Potential well; Quantum cascade lasers; Stimulated emission;
Conference_Titel :
Information and Communication Technologies, 2006. ICTTA '06. 2nd
Print_ISBN :
0-7803-9521-2
DOI :
10.1109/ICTTA.2006.1684720
