Comparison of distance mismatch and pair matching of CMOS devices

Distance matching and pair matching are compared for resistors and transistors of the 130nm technology. The device mismatch depending on the spatial distance between the devices is described using a statistical gradient parameter. This gradient parameter has to be taken into account for mixed signal circuit performance if short channel transistors or small width resistors are used. The gradient parameter is an increasing function of the critical device geometry parameter like the channel length.