The significance of the beryllium dopant profile on the temperature performance of 1.3 μm GaInAsP-InP multi-quantum well lasers

Author

Baillargeon, J.N. ; Anselm, K.A. ; Cho, A.Y.

Author_Institution

Bell Labs., Lucent Technol., Murray Hill, NJ, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

151

Abstract

The temperature dependence of the characteristics of high performance lasers for lightwave communications is an important consideration. The p-dopant profile has a direct impact on manufacturing yield, wavelength chirp, and laser modulation speed. The p-dopant is now also believed among the material parameters affecting temperature performance. In this work, the performance of GaInAsP-InP 1.3 μm multi-quantum well (MQW) lasers was investigated in relation to the p-dopant profile in the MQW, separate confinement (SCH) and InP p-cladding layers. All solid sources were used in the fabrication of the devices, which were grown by molecular beam epitaxy

Keywords

III-V semiconductors; chirp modulation; doping profiles; electro-optical modulation; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor doping; semiconductor growth; 1.3 mum; GaInAsP-InP; GaInAsP-InP 1.3 μm MQW lasers; GaInAsP-InP multi-quantum well lasers; InP p-cladding layers; SCH; beryllium dopant profile; laser modulation speed; lightwave communications; manufacturing yield; material parameters; molecular beam epitaxy; p-dopant; p-dopant profile; separate confinement; temperature performance; wavelength chirp; Charge carrier processes; Doping; Indium phosphide; Manufacturing; Performance gain; Quantum well devices; Quantum well lasers; Temperature dependence; Threshold current; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737776

Filename

737776