A novel 1.54 μm n-i-n photodetector based on low-temperature grown GaAs

Author

Chiu, Yi-Jen ; Kaman, Volkan ; Zhang, Sheng Z. ; Bowers, John E. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

155

Abstract

AlGaAs based material is a well developed material in both growth and processing. We used n-i-n material structure to increase the detector responsivity by one order magnitude (0.12 A/W) without sacrificing device bandwidth. We have demonstrated a novel long wavelength n-i-n photodetector with 17 GHz bandwidth response and considerably high 0.12 A/W of responsibility (internal quantum efficiency ~40%)

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; 1.54 μm n-i-n photodetector; 1.54 mum; 17 GHz; 40 percent; AlGaAs; AlGaAs based material; GHz bandwidth response; GaAs; detector responsivity; internal quantum efficiency; long wavelength n-i-n photodetector; low-temperature grown GaAs; n-i-n material structure; responsibility; Bandwidth; Detectors; Gallium arsenide; High speed optical techniques; Optical coupling; Optical waveguides; PIN photodiodes; Photoconductivity; Photodetectors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737778

Filename

737778