DocumentCode
2450156
Title
Profiling the Implanted Region in Si Using Nondestructive Transverse Acoustoelectric Voltage Versus Voltage Technique
Author
Davari, B. ; Das, P.
fYear
1982
fDate
27-29 Oct. 1982
Firstpage
379
Lastpage
384
Keywords
Capacitance-voltage characteristics; Delay lines; Doping profiles; Impurities; Monitoring; Schottky barriers; Substrates; Surface acoustic waves; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
1982 Ultrasonics Symposium
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/ULTSYM.1982.197851
Filename
1534791
Link To Document