DocumentCode :
2450156
Title :
Profiling the Implanted Region in Si Using Nondestructive Transverse Acoustoelectric Voltage Versus Voltage Technique
Author :
Davari, B. ; Das, P.
fYear :
1982
fDate :
27-29 Oct. 1982
Firstpage :
379
Lastpage :
384
Keywords :
Capacitance-voltage characteristics; Delay lines; Doping profiles; Impurities; Monitoring; Schottky barriers; Substrates; Surface acoustic waves; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
1982 Ultrasonics Symposium
Conference_Location :
San Diego, CA, USA
Type :
conf
DOI :
10.1109/ULTSYM.1982.197851
Filename :
1534791
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2450156
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