Iron doped semi-insulating GaInP lattice matched to GaAs for device fabrication

I-V curves of semi-insulating Ga_0.51In_0.49P:Fe (E_g=1.9 eV) with various Fe concentrations obtained at 125°C are presented, The shapes of these curves are characteristic of the measurements made at 100 to 200°C. The I-V behaviour of the material is different if Fe concentration is below or above 1.5×10¹⁷ cm^-3. Differential resistivity derived from these curves also exhibits a maximum at Fe=1.5×10¹⁷ cm^-3. These observations indicate that the cause of semi-insulation may be different below and above this concentration. It is suggested that Fe may be mostly site incorporated in the low concentration regime and mostly in the form of Fe-P complexes in the high concentration regime, A GaInP/GaInAsP/GaAs buried heterostructure with semi-insulating Ga_0.51In_0.49P:Fe regrowth has been fabricated for the first time to demonstrate the usefulness of the investigated material in device fabrication