DocumentCode
2450443
Title
Characterization of GaAs devices by a versatile pulsed I-V measurement system
Author
Platzker, A. ; Palevsky, A. ; Nash, S. ; Struble, W. ; Tajima, Y.
Author_Institution
Raytheon Res. Div., Lexington, MA, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
1137
Abstract
The authors build and utilized a pulsed I-V system which is capable of reaching any current-voltage point of three-terminal devices from any arbitrarily chosen DC bias point. The system, which can be used on wafer, serves as an invaluable tool for device modeling and process diagnostics. Direct dependence of the pulsed I-V curves on the DC bias was found in GaAs MESFETs and HEMTs (high-electron mobility transistors).<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; characteristics measurement; gallium arsenide; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; DC bias point; GaAs devices; HEMTs; MESFETs; device modeling; high-electron mobility transistors; microwave transistors; process diagnostics; pulsed I-V measurement system; three-terminal devices; Breakdown voltage; Current measurement; FETs; Frequency measurement; Gallium arsenide; HEMTs; MESFETs; MODFETs; Pulse measurements; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99780
Filename
99780
Link To Document