Title :
First results of s.i. GaAs single crystal growth applying the vapour pressure controlled Czochralski method
Author :
Neubert, M. ; Seifert, M. ; Rudolph, P. ; Trompa, K. ; Pietsch, M.
Author_Institution :
Inst. fur Kristallzuchtung, Berlin, Germany
fDate :
29 Apr-3 May 1996
Abstract :
The purpose of this paper is to show the current stage of development of the Vapour Pressure Controlled Czochralski Method (VCZ) at the Institute of Crystal Growth (IKZ) in Berlin. First 3" s.i. GaAs crystals, grown in our laboratory, will be presented. The paper briefly summarizes investigations on i) crystal perfection i.e., etch pit density (EPD), cell structure, precipitates and, ii) electrical data, The properties of the crystals are acceptable for s.i. GaAs. An average EPD in the range from 1 to 2×104 cm-2 is just achieved but, does not yet match the requirements of very low EPD material
Keywords :
III-V semiconductors; crystal growth from melt; dislocation etching; electrical resistivity; gallium arsenide; precipitation; semiconductor growth; semiconductor materials; 3 in; GaAs; GaAs single crystal growth; cell structure; crystal perfection; electrical data; etch pit density; precipitates; vapour pressure controlled Czochralski method; Crystalline materials; Crystals; Etching; Gallium arsenide; Laboratories; Pressure control; Solids; Temperature control; Temperature distribution; Thermal stresses;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570868
