Title :
Essential physics of carrier transport in nanoscale MOSFETs
Author :
Lundstrom, Mark ; Ren, Zhibin ; Datta, Supriyo
Author_Institution :
Purdue Univ., West Lafayette, IN, USA
Abstract :
A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined
Keywords :
MOSFET; high field effects; nanotechnology; numerical analysis; quantum interference phenomena; semiconductor device models; technology CAD (electronics); transport processes; ballistic transport; carrier transport; carrier transport physics; device TCAD; equilibrium transport; nanoscale MOSFETs; numerical simulation; off-transport; quantum transport; scattering; Acoustic scattering; Backscatter; Ballistic transport; Bipolar transistors; Charge carrier density; Electrostatics; Fluid flow; MOSFETs; Numerical simulation; Physics computing;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871193
