DocumentCode
2450605
Title
Essential physics of carrier transport in nanoscale MOSFETs
Author
Lundstrom, Mark ; Ren, Zhibin ; Datta, Supriyo
Author_Institution
Purdue Univ., West Lafayette, IN, USA
fYear
2000
fDate
2000
Firstpage
1
Lastpage
5
Abstract
A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined
Keywords
MOSFET; high field effects; nanotechnology; numerical analysis; quantum interference phenomena; semiconductor device models; technology CAD (electronics); transport processes; ballistic transport; carrier transport; carrier transport physics; device TCAD; equilibrium transport; nanoscale MOSFETs; numerical simulation; off-transport; quantum transport; scattering; Acoustic scattering; Backscatter; Ballistic transport; Bipolar transistors; Charge carrier density; Electrostatics; Fluid flow; MOSFETs; Numerical simulation; Physics computing;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871193
Filename
871193
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