MOSFET modeling into the ballistic regime

Author

Bude, J.D.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

2000

fDate

2000

Firstpage

23

Lastpage

26

Abstract

Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I_ON, g_m and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed

Keywords

MOSFET; Monte Carlo methods; carrier lifetime; carrier mobility; electric current; error analysis; high field effects; nanotechnology; semiconductor device models; surface scattering; 40 to 150 nm; MOSFET modeling; Monte-Carlo simulations; ballistic regime; channel lengths; drift diffusion simulated channel velocities; drift diffusion simulated on-current; drift diffusion simulated transconductance; drift-diffusion simulations; physically-based full band Monte-Carlo simulations; simulation errors; surface scattering conditions; Ballistic transport; Boltzmann equation; CMOS process; Doping; Electrons; MOS devices; MOSFET circuits; Monte Carlo methods; Scattering; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on

Conference_Location

Seattle, WA

Print_ISBN

0-7803-6279-9

Type

conf

DOI

10.1109/SISPAD.2000.871197

Filename

871197