DocumentCode :
2450712
Title :
MOSFET modeling into the ballistic regime
Author :
Bude, J.D.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fYear :
2000
fDate :
2000
Firstpage :
23
Lastpage :
26
Abstract :
Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated ION, gm and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed
Keywords :
MOSFET; Monte Carlo methods; carrier lifetime; carrier mobility; electric current; error analysis; high field effects; nanotechnology; semiconductor device models; surface scattering; 40 to 150 nm; MOSFET modeling; Monte-Carlo simulations; ballistic regime; channel lengths; drift diffusion simulated channel velocities; drift diffusion simulated on-current; drift diffusion simulated transconductance; drift-diffusion simulations; physically-based full band Monte-Carlo simulations; simulation errors; surface scattering conditions; Ballistic transport; Boltzmann equation; CMOS process; Doping; Electrons; MOS devices; MOSFET circuits; Monte Carlo methods; Scattering; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
Type :
conf
DOI :
10.1109/SISPAD.2000.871197
Filename :
871197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2450712
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