DocumentCode
2450812
Title
Coupled Monte Carlo simulation of Si and SiO2 transport in MOS capacitors
Author
Palestri, Pierpaolo ; Selmi, Luca ; Pavesi, Maura ; Widdershoven, Frans ; Sangiorgi, E.
Author_Institution
DIEGM, Udine, Italy
fYear
2000
fDate
2000
Firstpage
38
Lastpage
41
Abstract
We present a Monte Carlo (MC) model comprising SiO2 and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown
Keywords
CMOS integrated circuits; MOS capacitors; Monte Carlo methods; dielectric thin films; electric breakdown; electronic density of states; high field effects; hot carriers; impact ionisation; integrated circuit modelling; integrated memory circuits; leakage currents; random-access storage; 5 to 15 nm; CMOS IC; MOS capacitors; MOS structures; Monte Carlo model; SILC; Si transport; SiO2 transport; SiO2-Si; breakdown; carrier multiplication; coupled Monte Carlo simulation; full-band density of states calculations; hole distribution; impact ionization; nonvolatile memory applications; oxide degradation; oxide transport; scattering rate calculations; simulations; stress-induced leakage current; Acoustic scattering; Charge carrier processes; Computational modeling; Electrons; Impact ionization; MOS capacitors; Particle scattering; Phonons; Silicon compounds; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location
Seattle, WA
Print_ISBN
0-7803-6279-9
Type
conf
DOI
10.1109/SISPAD.2000.871201
Filename
871201
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