Title :
A new approach to active phased arrays through RF-wafer scale integration
Author :
Whicker, L.R. ; Zingaro, J.J. ; Driver, M.C. ; Clarke, R.C.
Author_Institution :
Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
A novel approach to active phased array technology is described. Several modules are fabricated at the same time and placed in a layered structure. The layers include the RF modules, cooling manifold, DC bias distribution, RF manifold, and radiating elements. In this configuration, 16 or more T/R (transmit/receive) modules are fabricated on as single 3-in GaAs wafer. The realization of multiple modules on a wafer is made possible by redundancy of circuit elements and novel mechanical switches. Preliminary results on these efforts are presented.<>
Keywords :
III-V semiconductors; VLSI; antenna phased arrays; gallium arsenide; DC bias distribution; GaAs wafer; RF manifold; RF modules; RF-wafer scale integration; T/R modules; active phased arrays; cooling manifold; layered structure; mechanical switches; radiating elements; redundancy; Cooling; Costs; Driver circuits; Gallium arsenide; Packaging; Phased arrays; Radar antennas; Radar applications; Radio frequency; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99799
