Title :
Q-band monolithic phase and amplitude weights
Author :
Lester, J.A. ; Nakano, K. ; Ngan, Y.C.
Author_Institution :
TRW Electron. & Defense, Redondo Beach, CA, USA
Abstract :
Monolithic variable amplitude and phase weight components have been developed for applications at Q-band. The amplitude weight consists of a three-stage variable gain amplifier using 0.25- mu m high-electron-mobility transistor (HEMT) devices. Variable gain was achieved by adjustment of the bias voltages. The variable phase shifter is based on the I/Q design and utilizes two of the variable gain amplifiers in quadrature. Continually varible phase shift between 0 degrees and 90 degrees was achieved with 2-dB insertion loss.<>
Keywords :
MMIC; high electron mobility transistors; microwave amplifiers; phase shifters; 0.25 micron; 2 dB; I/Q design; Q-band; amplitude weight; bias voltages; high-electron-mobility transistor; insertion loss; phase weight; three-stage variable gain amplifier; variable amplitude; variable phase shifter; Distributed parameter circuits; Fingers; Gain; HEMTs; MIM capacitors; Metal-insulator structures; Phase shifters; Phased arrays; Resistors; Semiconductor device modeling;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99801
