Title :
Sub-continuum thermal simulations of deep sub-micron devices under ESD conditions
Author :
Sverdrup, Per G. ; Banerjee, Kaustav ; Dai, Changhong ; Shih, Wei-kai ; Dutton, Robert W. ; Goodson, Kenneth E.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Abstract :
The decreasing dimensions of IC devices is rendering the heat diffusion equation highly inaccurate for simulations of electrostatic discharge (ESD) phenomena. As dimensions of the heated region in the device are reduced far below 200 nm, neglecting the ballistic, sub-continuum nature of phonon conduction in the silicon lattice can strongly underpredict the temperature rise. This work integrates the phonon Boltzmann transport equation (BTE) in deep sub-micron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si and SOI devices and predicts temperature rises consistent with failure voltage measurements for practical devices
Keywords :
Boltzmann equation; MOS integrated circuits; electrostatic discharge; failure analysis; integrated circuit measurement; integrated circuit modelling; nanotechnology; phonons; thermal analysis; 200 nm; BTE solution methodology; ESD conditions; ESD phenomena simulation; IC device dimensions; NMOS devices; SOI devices; Si; Si devices; Si-SiO2; ballistic sub-continuum phonon conduction; electrostatic discharge phenomena; failure voltage measurements; heated region dimensions; phonon Boltzmann transport equation; silicon devices; silicon lattice; sub-continuum thermal simulations; temperature rise prediction; temperature rises; Boltzmann equation; Circuit simulation; Discrete event simulation; Electrostatic discharge; Phonons; Predictive models; Resistance heating; Scattering; Silicon; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871205
